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RoomTemperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells Auteur(s): Fedichkin F., Guillet T., Valvin P., Jouault B., Brimont C., Bretagnon T., Lahourcade L., Grandjean N., Lefebvre P., Vladimirova M. (Article) Publié: Physical Review Applied, vol. 6 p.014011 (2016) 
Picosecond dynamics of free and bound excitons in doped diamond Auteur(s): Barjon Julien, Valvin P., Brimont C., Lefebvre P., Brinza Ovidiu, TALLAIRE Alexandre, ACHARD Jocelyn, Jomard François, PinaultThaury MarieAmandine
Conference: Hasselt Diamond Workshop 2016  SBDD XXI (Hasselt, BE, 20160309) 
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates. Auteur(s): Fedichkin F., Jouault B., Vladimirova M., Guillet T., Brimont C., Valvin P., Bretagnon T., Grandjean Nicolas, Lefebvre P.
Conference: Collective Electronic Excitations in 2D (CEE 2D 2015)  INDEX Conference (Pise, IT, 20150920) 
“Naturally” indirect excitons in wide bandgap semiconductor quantum wells. Auteur(s): Lefebvre P.
Conférence invité: INDEX International School on the Physics of Indirect Excitons (Les Houches, FR, 20150316) 
Transport of indirect excitons in ZnO quantum wells. Auteur(s): Kuznetsova Yuliya, Fedichkin F., Andreakou P., Calman Eric, Butov L. V., Lefebvre P., Bretagnon T., Guillet T., Vladimirova M., Morhain Christian, Chauveau JeanMichel (Article) Publié: Optics Letters, vol. 40 p.36673670 (2015) 