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LIFSHITS Maria
Maria.LIFSHITS
univ-montp2.fr
046714....
Domaines de Recherche: - Physique/Physique/Optique
- Physique/Physique/Instrumentations et Détecteurs
- Physique/Physique/Physique Classique
- Physique/Matière Condensée/Science des matériaux
- Physique/Matière Condensée/Autre
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Dernieres productions scientifiques :
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Optical Pump-Probe Detection of Manganese Hyperfine Beats in (Cd,Mn)Te Crystals 
Auteur(s): CRONENBERGER S., VLADIMIROVA M., ANDREEV S., Lifshits M., SCALBERT D.
(Article) Publié:
Physical Review Letters, vol. 110 p.077403 (2013)
Ref HAL: hal-00789507_v1
DOI: 10.1103/PhysRevLett.110.077403
Résumé: Optical pump-probe experiments reveal spin beats of manganese ions in (Cd,Mn)Te, due to hyperfine and crystal fields. At "magic" orientations of the magnetic field, the effect of local crystal field is strongly suppressed. In this case, the spin precession of Mn2+ embedded in the lattice approaches the precession expected for the free ion. Following optical excitation, regular spin pulses show up, revealing the one-to-one correspondence between precession frequency and Mn2+ nuclear spin state. The period of the spin pulses accurately determines the hyperfine constant |A|=705 neV. The manganese spin coherence time up to T2Mn≃15 ns is measured for a manganese concentration x=0.0011.
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Helicity sensitive terahertz radiation detection by field effect transistors
Auteur(s): Drexler C., DIAKONOVA N., Olbrich P., Karch J., Schafberger M., Karpierz K., Mityagin Yu, Lifshits M., TEPPE F., Klimenko O., Meziani Y. M., KNAP W., Ganichev S. d.
(Article) Publié:
Journal of Applied Physics, vol. 111 p.124504 (2012)
Ref HAL: hal-00748688_v1
DOI: 10.1063/1.4729043
Résumé: Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also, linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature, and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.
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AlGaN/GaN based field effect transistors for terahertz detection and imaging
Auteur(s): Sakowicz M., Lifshits M., Klimenko O., COQUILLAT D., DIAKONOVA N., TEPPE F., Gaquiere C., Poisson M. A., Delage S., KNAP W.
Conference: GALLIUM NITRIDE MATERIALS AND DEVICES VII (San Francisco, US, 2012-01-23)
Actes de conférence: Proceedings of SPIE, vol. 8262 p.82621V (2012)
Ref HAL: hal-00704348_v1
DOI: 10.1117/12.908236
Résumé: AlGaN/GaN based FETs have great potential as sensitive and fast operating detectors because of their material advantages such as high breakdown voltage, high electron mobility, and high saturation velocity. These advantages could be exploited for resonant and non-resonant terahertz detection. We have designed, fabricated, and characterized AlGaN/GaN based FETs as single pixel terahertz detectors. This work focuses on non-resonant detection and imaging using GaN field plate FETs. To evaluate their performances as terahertz detectors, we have measured the responsivity as a function of gate voltage, the azimuthal angle between the terahertz electric field, the source-to-drain direction, and the temperature. A simple analytical model of the response is developed. It is based on plasma density perturbation in the transistor channel by the incoming terahertz radiation. The model shows how the non-resonant detection signal is related to static (dc) transistor characteristics and it fully describes the experimental results on the non-resonant sub-terahertz detection by the AlGaN/GaN based FETs. The imaging performances are evaluated by scanning objects in transmission mode and an example of application of terahertz imaging as new non-destructive technique for the quality control of materials is given. Results indicate that these FETs can be considered as promising devices for terahertz detection and imaging applications.
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Terahertz responsivity of field effect transistors versus their static channel conductivity and loading effects
Auteur(s): Sakowicz M., LIFSHITS M., KLIMENKO O., Schuster F., COQUILLAT D., TEPPE F., KNAP W.
(Article) Publié:
Journal of Applied Physics, vol. 110 p.4512 (2011)
Ref HAL: hal-00635960_v1
DOI: 10.1063/1.3632058
Résumé: We study the broadband photovoltaic response of field effect transistors on terahertz radiation. A simple physical analytical model of the response is developed. It is based on plasma density perturbation in the transistor channel by the incoming terahertz radiation. The model shows how the non-resonant detection signal is related to static (dc) transistor characteristics. We analyze loading effects related to capacitive, inductive, and resistive coupling of the detector to the read-out circuit as a function of modulation frequencies and loading resistors. As we show, the proposed physical model completed by loading effects fully describes the experimental results on the non-resonant sub-terahertz detection by all studied III-V (GaAs, GaN) and silicon based transistors. Field effect transistors were recently proposed as the best terahertz detecting pixels for fabrication of low cost focal plane arrays for terahertz imaging. This article gives prospects for electrical simulation of these transistors and their optimal integration in the focal plane arrays.
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Acoustic switching of quantum states in semiconductors
Auteur(s): Averkiev N. s., Rozhansky I. v., Tarasenko S. a., LIFSHITS M.
(Article) Publié:
Low Temperature Physics, vol. 37 p.197-201 (2011)
DOI: 10.1063/1.3573604
Résumé: The interaction between solitary elastic strain pulses (acoustic solitons) and localized holes in low-dimensional silicon structures is studied theoretically. It is shown that a soliton propagating through a region of hole localization converts it from one quantum state to another characterized by a different projection of the angular momentum. This effect originates in splitting of the ground hole state, which is degenerate in the absence of a perturbation, by the elastic strain. A detailed microscopic calculation of the acoustic switching of quantum mechanical states is carried out for holes localized at a quantum dot or at a shallow impurity acceptor in a quantum well. It is shown that the acoustic soliton amplitude required for complete reversal of the projected angular momentum of a hole corresponds to the amplitude of typical experimentally produced strain pulses. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573604]
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