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(167) Production(s) de LEFEBVRE P.
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Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL) 
Auteur(s): Sonderegger Samuel, Corfdir Pierre, Balet Laurent, Lefebvre P., Martin Denis, Grandjean N., Ganière Jean-Daniel, Deveaud-Plédran Benoit
(Affiches/Poster)
Int. Conf. on Nitride Semiconductors - ICNS8. (Jeju, KR), 2009-10-18
Ref HAL: hal-00797196_v1
Exporter : BibTex | endNote
Résumé: Optical properties of V-pits in GaN through temperature-dependent picosecond Time-Resolved Cathodolminescence (pTRCL)
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Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.
Auteur(s): Corfdir Pierre , Lefebvre P., Ristic J., Sonderegger Samuel, Balet Laurent, Zhu T., Dussaigne Amélie, Martin Denis, Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit
Conference: Int. Conf. on Nitride Semiconductors - ICNS8. (Jeju, KR, 2009-10-18)
Ref HAL: hal-00797195_v1
Exporter : BibTex | endNote
Résumé: Low-temperature picosecond time-resolved cathodoluminescence study of localization in a-plane GaN.
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Strong coupling of multiple branches polariton in a ZnO microcavity.
Auteur(s): Faure Stéphane, Guillet T., Brimont C., Bretagnon T., Lefebvre P., Gil B., Zúñiga-Pérez Jesús, Frayssinet Eric, Leroux Mathieu
(Affiches/Poster)
Int. Conf. On Optics of Excitons in Confined Systems - OECS11. (Madrid, ES), 2009-09-07
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Exciton localization on basal stacking faults in a-plane GaN probed by picosecond time-resolved cathodoluminescence.
Auteur(s): Corfdir Pierre, Lefebvre P., Ristic J., Dussaigne Amélie, Sonderegger Samuel, Martin Denis, Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit
(Affiches/Poster)
Int. Conf. On Optics of Excitons in Confined Systems - OECS11. (Madrid, ES), 2009-09-07
Ref HAL: hal-00797193_v1
Exporter : BibTex | endNote
Résumé: We examine the capture dynamics of excitons by basal stacking faults in a-plane GaN by using time-resolved CL.
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Effect of the internal electric field on excitonic transitions in ZnO/(Zn,Mg)O quantum wells.
Auteur(s): Bretagnon T., Guillet T., Lefebvre P., Gil B., Morhain Christian
Conférence invité: 9th Physics of Light-Matter Coupling and Nanostructures - PLMCN. (Lecce, IT, 2009-04-16)
Ref HAL: hal-00797192_v1
Exporter : BibTex | endNote
Résumé: We investigate by time-resolved spectroscopy the consequences of large internal electric fields on the exciton recombination dynamics in ZnO/(Zn,Mg)O quantum wells.
Commentaires: Thierry Bretagnon orateur invité
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Electron localization by a donor in the vicinity of a basal stacking fault in GaN.
Auteur(s): Corfdir P., Lefebvre P., Ristic J., Ganière Jean-Daniel, Deveaud-Plédran Benoit
(Article) Publié:
Physical Review B, vol. 80 p.153309 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00632552_v1
DOI: 10.1103/PhysRevB.80.153309
WoS: 000271352000017
Exporter : BibTex | endNote
30 Citations
Résumé: We study the effects of the vicinity between a shallow donor nucleus and an I1-type basal stacking fault (BSF) in GaN. We propose a numerical calculation, in the "effective potential" formalism, of energies and envelope functions of electrons submitted to the conjunction of attractive potentials caused by the BSF and the donor. We show that the donor localizes the electron along the plane of the BSF, even when the donor lies as far as 10 nm from the BSF. Conversely, the presence of the BSF enhances the donor binding energy by up to a factor of 1.8, when the donor is placed exactly on the BSF. We briefly discuss the probability of occurrence of such a situation in, e.g., a-plane GaN, as well as its consequences on transport and optical properties of this material.
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Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.
Auteur(s): Corfdir P., Lefebvre P., Balet Laurent, Sonderegger Samuel, Dussaigne Amélie, Zhu T., Martin Denis, Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit
(Article) Publié:
Journal Of Applied Physics, vol. 107 p.043524 (2010)
Texte intégral en Openaccess :
Ref HAL: hal-00632548_v1
DOI: 10.1063/1.3305336
WoS: 000275028900040
Exporter : BibTex | endNote
30 Citations
Résumé: We present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons localized on basal stacking faults (BSFs) crossing the QW plane, forming quantum wires (QWRs) at the intersection. We show that the dynamics of QW excitons is dominated by their capture on QWRs, with characteristic decay times ranging from 50 to 350 ps, depending on whether the local density of BSFs is large or small. We therefore relate the multiexponential behavior generally observed by time-resolved photoluminescence in non-polar (Al,Ga)/GaN QW to the spatial dependence of QW exciton dynamics on the local BSF density. QWR exciton decay time is independent of the local density in BSFs and its temperature evolution exhibits a zero-dimensional behavior below 60 K. We propose that QWR exciton localization along the wire axis is induced by well-width fluctuation, reproducing in a one-dimensional system the localization processes usually observed in QWs.
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