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(167) Production(s) de LEFEBVRE P.
Sub-meV linewidth in GaN nanowire ensembles: Absence of surface excitons due to the field ionization of donors Auteur(s): Corfdir Pierre, Zettler Johannes K., Hauswald Christian, Fernandez-Garrido Sergio, Brandt Oliver, Lefebvre P. (Article) Publié: -Physical Review B Condensed Matter And Materials Physics (1998-2015), vol. 90 p.205301 (2014) Texte intégral en Openaccess : |
Light-Emitting-Diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range. Auteur(s): Bengoechea-Encabo Ana, Albert Steven, Lopez-Romero D., Lefebvre P., Barbagini Francesca, Torres-Pardo A., González-Calbet Jose M., Sanchez-Garcia M.A., Calleja E. (Article) Publié: Nanotechnology, vol. 25 p.435203 (2014) Texte intégral en Openaccess : |
Transient photoluminescence of aluminum-rich (Al, Ga) N low-dimensional structures Auteur(s): Lefebvre P., Brimont C., Valvin P., Gil B., Miyake H., Hiramatsu Kazumaza
Conference: International Conference on Nitride Semiconductors – ICNS10. (Washington DC, US, 2013-08-25) |
VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion. Auteur(s): Lopez-Ponce Manuel, Nakamura A., Suzuki M., Temmyo J., Agouram S., Martinez-Tomas Mc, Munoz-Sanjose V., Lefebvre P., Ulloa J.-M., Munoz E., Hierro A. (Article) Publié: Nanotechnology, vol. 25 p.255202 (2014) |
Towards purely radiative recombination at room-temperature in nonpolar AlGaN/GaN quantum wells. Auteur(s): Corfdir Pierre, Dussaigne Amélie, Shahmohammadi Mehran, Teisseyre Henryk, Suski Tadeusz, Grzegory Izabella, Lefebvre P., Giraud E., Ganière Jean-Daniel, Phillips Richard T., Grandjean Nicolas, Deveaud Benoit
Conference: E-MRS Fall Meeting (Varsovie, PL, 2013-09-16) |
Dipolar exciton fluids in (Al,Ga)N/GaN quantum wells Auteur(s): Kruse A., Valvin P., Vladimirova M., Guillet T., Bretagnon T., Andreakou P., Grandjean Nicolas, Lefebvre P. (Affiches/Poster) 14th International Conference on the Physics of Light-Matter Coupling in Nanostructures - PLMCN14 (Hersonissos, Crète, GR), 2013-05-27 |
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates Auteur(s): Corfdir Pierre, Dussaigne Amelie, Teisseyre Henryk, Suski Tadeusz, Grzegory Izabella, Lefebvre P., Giraud Etienne, Shahmohammadi Mehran, Phillips Richard T., Ganiere Jean-Daniel, Grandjean Nicolas, Deveaud Benoit
Conference: International Workshop on Nitride semiconductors. (Sapporo, JP, 2012-10-14) |