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(167) Production(s) de LEFEBVRE P.
Surface related optical properties of GaN-based nanowires. Auteur(s): Lefebvre P. Chapître d'ouvrage: Wide Band Gap Semiconductor Nanowires 1., vol. p.59-79 (2014) |
Three-dimensional magneto-photoluminescence as a probe of the electronic properties of crystal phase quantum disks in GaAs nanowires. Auteur(s): Corfdir Pierre, van Hattem Barbara, Uccelli Emanuele, Conesa-Boj Sonia, Lefebvre P., Fontcuberta I Morral Anna, Phillips Richard (Article) Publié: Nano Letters, vol. 13 p.5303 (2013) |
Spatio-Temporal Dynamical Properties of Naturally Indirect Excitons in Polar Nitride Quantum Wells. Auteur(s): Lefebvre P.
Conférence invité: European Materials Research Society (E-MRS) Srping Meeting. Symposium L: Group III Nitrides. (Strasbourg, FR, 2013-05-27) |
The mysterious 3.45 eV doublet in emission spectra of GaN nanowires. An open case in point. Auteur(s): Lefebvre P. (Séminaires) Ecole Polytechnique Fédérale de Lausanne - Institut de Physique de la Matière Condensée (Lausanne, CH), 2013-03-19 |
Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing Auteur(s): Lopez-Ponce Manuel, Hierro A., Ulloa J.-M., Lefebvre P., Munoz E., Agouram S., Muñoz-Sanjosé V., Yamamoto K., Nakamura A., Temmyo J. (Article) Publié: Applied Physics Letters, vol. 102 p.143103 (2013) Texte intégral en Openaccess : |
Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range. Auteur(s): Lefebvre P., Brimont C., Valvin P., Miyake H., Hiramatsu K., Gil B. (Affiches/Poster) International Workshop on Nitride semiconductors (IWN 2012). (Sapporo, JP), 2012-10-14 |
Role of the dielectric mismatch on the properties of donors in semiconductor nanostructures bounded by air. Auteur(s): Corfdir Pierre, Lefebvre P. (Article) Publié: Journal Of Applied Physics, vol. 112 p.106104 (2012) Texte intégral en Openaccess : |