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(167) Production(s) de LEFEBVRE P.
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Natural” INDirect EXcitons in Nanostructures Based on Hexagonal Wide Band-Gap Semiconductors. Auteur(s): Lefebvre P. (Séminaires) CNR-Nano (Modène, IT), 2011-12-06 |
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Picosecond Time-Resolved Cathodoluminescence to Probe Exciton Dynamics in a-Plane (Al,Ga)N/GaN Quantum Wells.  Auteur(s): Corfdir P., Lefebvre P., Dussaigne Amélie, Balet Laurent, Sonderegger Samuel, Zhu T., Martin Denis, Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit
Conference: Microscopy and Microanalysis 2011 (Nashville, Tennessee., US, 2011-08-07) |
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Technical Note. Time-Resolved Cathodoluminescence.
Auteur(s): Lefebvre P.
(Autres publications)
, 2011Texte intégral en Openaccess : |
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Light-emitting diode chip. Phosphor-free-all-InGaN White Light LEDs using Nanocolumns.
Auteur(s): Ristic Jelena, Strassburg Martin, Lefebvre P. Brevet: #EP2506321, (2012) |
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EP2518475 - Optical gas sensing device
Auteur(s): Bergbauer Werner, Lefebvre P. Brevet: #EP2518475, (2012) |
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Thermal carrier emission and nonradiative recombinations in nonpolar(Al,Ga)N/GaN quantum wells grown on bulk GaN. Auteur(s): Corfdir Pierre, Dussaigne Amélie, Teisseyre H., Suski T., Grzegory Izabella, Lefebvre P., Giraud E., Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit
(Article) Publié:
Journal Of Applied Physics, vol. 111 p.033517 (2012)
Texte intégral en Openaccess : |
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Efficient phosphor-free, white light emission by using ordered arrays of GaN/InGaN nanocolumnar LEDs grown by Selective Area MBE. Auteur(s): Albert Steven, Bengoechea-Encabo Ana, Sanchez-Garcia M.A., Barbagini Francesca, Calleja E., Luna E., Trampert A., Jahn Uwe, Lefebvre P., Lopez L.L., Estradé S., Rebled J.M., Peiró F., Nataf Gilles, de Mierry P., Zúñiga-Pérez Jesús
Conference: Workshop on Frontier Electronics - WOFE 7 (San Juan, PR, 2011-12-18) |
