Exciton dynamics involving basal stacking faults in a-plane GaN studied by low-temperature time-resolved cathodoluminescence. Auteur(s): Corfdir P., Ristic J., Lefebvre P., Dussaigne Amélie, Martin D., Ganière Jean-Daniel, Grandjean N., Deveaud-Plédran Benoit (Article) Publié: Applied Physics Letters, vol. 94 p.201115 (2009) Texte intégral en Openaccess : Ref HAL: hal-00391736_v1 DOI: 10.1063/1.3142396 WoS: 000266342800015 Exporter : BibTex | endNote 42 Citations Résumé: Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults (BSFs)] in relation to the local density in BSFs. We describe the slow exciton capture rate on isolated BSFs by a diffusion model involving donors via a hopping process. Where BSFs are organized into bundles, we relate the shorter rise time to intra-BSF localization processes and the multiexponential decay to the type-II band alignment of BSFs in wurtzite GaN. |