DOI: 10.1134/S1063782609050261
WoS: 000265835000026
1 Citation
Résumé:

Lasers that emit in the 1.3 mu m wavelength range and include the active region based on InAs quantum dots were grown by the method of molecular-beam epitaxy and have been studied. The cavity includes a multilayer interference reflector, which brings about the fact that a large factor of optical confinement and low leakage losses are obtained only for the light propagating at some angle and, consequently, having a strictly definite wavelength. It is shown that, due to the use of such a waveguide structure, the temperature shift of the lasing wavelength is 0.2 nm/K, which is 2.5 times smaller than this shift in the lasers with quantum dots and with a conventional structure of the waveguide. The lasers with the stripe-contact width W = 10 mu m exhibited the spatially single-mode emission, which verifies the advantages of the suggested nonconventional structure of the optical waveguide.