Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies. Auteur(s): Albert Steven, Bengoechea-Encabo Ana, Lefebvre P., Barbagini Francesca, Sanchez-Garcia M.A., Calleja E., Jahn Uwe, Trampert A. (Article) Publié: Applied Physics Letters, vol. 100 p.231906 (2012) Texte intégral en Openaccess : Ref HAL: hal-00704507_v1 DOI: 10.1063/1.4728115 WoS: 000305089900028 Exporter : BibTex | endNote 29 Citations Résumé: This work reports on the morphology control of the selective area growth of GaN-based nanostructures on c-plane GaN templates. By decreasing the substrate temperature, the nanostructures morphology changes from pyramidal islands (no vertical m-planes), to GaN nanocolumns with top semipolar r-planes, and further to GaN nanocolumns with top polar c-planes. When growing InGaN nano-disks embedded into the GaN nanocolumns, the different morphologies mentioned lead to different optical properties, due to the semi-polar and polar nature of the r-planes and c-planes involved. These differences are assessed by photoluminescence measurements at low temperature and correlated to the specific nano-disk geometry. |