Role of the dielectric mismatch on the properties of donors in semiconductor nanostructures bounded by air. Auteur(s): Corfdir Pierre, Lefebvre P. (Article) Publié: Journal Of Applied Physics, vol. 112 p.106104 (2012) Texte intégral en Openaccess : Ref HAL: hal-00758583_v1 DOI: 10.1063/1.4765031 WoS: 000311969800173 Exporter : BibTex | endNote 12 Citations Résumé: We compute by envelope function calculations the binding energy EB of donor atoms in thin slabs of semiconductor bounded by air, accounting for the dielectric mismatch between air and the semiconductor. We detail how EB depends on the donor-site and on the thickness of the slab. We show that due to the competition between surface and dielectric mismatch effects, EB does not monotonically decrease from the center to the surface of the nanostructures. Finally, we discuss our results in regard to recent photoluminescence experiments performed on ensemble and single GaN nanowires. |