--------------------
- Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range. hal link

Auteur(s): Lefebvre P., Brimont C., Valvin P., Miyake H., Hiramatsu K., Gil B.

(Affiches/Poster) International Workshop on Nitride semiconductors (IWN 2012). (Sapporo, JP), 2012-10-14


Ref HAL: hal-00797472_v1
Exporter : BibTex | endNote
Résumé:

Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range.