Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range. Auteur(s): Lefebvre P., Brimont C., Valvin P., Miyake H., Hiramatsu K., Gil B. (Affiches/Poster) International Workshop on Nitride semiconductors (IWN 2012). (Sapporo, JP), 2012-10-14 Ref HAL: hal-00797472_v1 Exporter : BibTex | endNote Résumé: Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range. |