Asymmetric Dual-Grating Gate InGaAs/InAlAs/InP HEMTs for Ultrafast and Ultrahigh Sensitive Terahertz Detection Auteur(s): Otsuji T, Watanabe Takayuki, Boubanga Tombet Stephane, Suemitsu T., Coquillat D., Knap W., Fateev D. V., Popov V. V.
Conference: 25th International Conference on Indium Phosphide and Related Materials (IPRM) (Kobe, JP, 2013-05-19) Ref HAL: hal-00980610_v1 Exporter : BibTex | endNote Résumé: This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/root Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions. |