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- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates doi link

Auteur(s): Corfdir Pierre, Dussaigne Amelie, Teisseyre Henryk, Suski Tadeusz, Grzegory Izabella, Lefebvre P., Giraud Etienne, Shahmohammadi Mehran, Phillips Richard T., Ganiere Jean-Daniel, Grandjean Nicolas, Deveaud Benoit

Conference: International Workshop on Nitride semiconductors. (Sapporo, JP, 2012-10-14)
Actes de conférence: Japanese Journal of Applied Physics, vol. 52 p.08JC01 (2013)
Texte intégral en Openaccess : openaccess


Ref HAL: hal-01179181_v1
DOI: 10.7567/JJAP.52.08JC01
WoS: 000323883100041
Exporter : BibTex | endNote
8 Citations
Résumé:

This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.