Ref HAL: hal-00960242_v1
Ref Arxiv: 1312.3737
DOI: 10.1063/1.4864082
WoS: 000331803800011
Ref. & Cit.: NASA ADS
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149 Citations
Résumé:

We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.