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- Quasi-ideal Nonlinear Electrical Behavior of Polycrystalline SnO2 Ceramic Varistors Doped with SiO2 doi link

Auteur(s): Metz R.(Corresp.), Hassanzadeh Mehrdad, Mahesh K.V., Ananthakumar S.

(Article) Publié: Journal Of Electronic Materials, vol. 43 p.1411-1418 (2014)


Ref HAL: hal-00968930_v1
DOI: 10.1007/s11664-014-3035-3
WoS: 000334269500013
Exporter : BibTex | endNote
4 Citations
Résumé:

The influence of SiO2 doping on the microstructure and electrical behavior of SnO2 varistors has been studied. The varistor effect was studied over a wide range from 10 9 A to 104 A. It is shown that the J(E) characteristic of SnO2 ceramics exhibits a nonlinear coefficient>100. The SiO2 doping also resulted in a sharp-abrupt upturn region in the I-V characteristic, indicating a single semiconductor junction behavior. The leakage current of the varistors is rather low, on the order of 10 10 S m 1. In the upturn region of operation where the curve departs from the nonlinear relation and approaches the value of the bulk resistivity of the material, the ceramic is characterized by a current density almost independent of the applied voltage. A very small amount of SiO2 causes large perturbations of the conventional thermionic emission observed in varistor ceramic materials.