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- Terahertz studies of 2D and 3D topological transitions doi link

Auteur(s): Marcinkiewicz M., Teppe F., Consejo C., Diakonova N., Desrat W., Coquillat D., Ruffenach S., Knap W., Mikhailov N. N., Dvoretskii S. A., Gonzalez-Posada F., Rodriguez Jean-Baptiste, Tournié E.

Conference: 19TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON' 19) (Salamanca, ES, 2015)

Texte intégral en Openaccess : openaccess


Ref HAL: hal-01249953_v2
DOI: 10.1088/1742-6596/647/1/012037
WoS: WOS:000366236800037
Exporter : BibTex | endNote
1 Citation
Résumé:

We report terahertz measurements on bulk HgCdTe crystals at the semiconductor- to-semimetal topological transition and InAs/GaSb inverted band structure quantum well. We show that physical parameters of these narrow gap systems driven in specific topological phases can be efficiently extracted by means of terahertz photoconductivity studies.