Ref HAL: hal-01360270_v1
Ref Arxiv: 1602.07524
DOI: 10.1103/PhysRevLett.116.176801
WoS: WOS:000374964400010
Ref. & Cit.: NASA ADS
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39 Citations
Résumé:

By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by re-collisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magneto-transport in presence of a microwave field, taking account of memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.

Commentaires: 6 pages, 3 figures. Réf Journal: Phys. Rev. Lett. 116, 176801 (2016)