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- Wide modulation bandwidth terahertz detection in 130 nm CMOS technology doi link

Auteur(s): Nahar Shamsun, Shafee Marwah, Blin Stéphane, Pénarier Annick, Nouvel Philippe, Coquillat D., Safwa Amr M. E., Knap W., Hella Mona M.

(Article) Publié: The European Physical Journal Applied Physics, vol. 76 p.20101 (2016)
Texte intégral en Openaccess : openaccess


Ref HAL: hal-01510368_v1
DOI: 10.1051/epjap/2016160302
WoS: WOS:000392422600001
Exporter : BibTex | endNote
5 Citations
Résumé:

Design, manufacturing and measurements results for silicon plasma wave transistors based wireless communication wideband receivers operating at 300 GHz carrier frequency are presented. We show the possibility of Si-CMOS based integrated circuits, in which by: (i) specific physics based plasma wave transistor design allowing impedance matching to the antenna and the amplifier, (ii) engineering the shape of the patch antenna through a stacked resonator approach and (iii) applying bandwidth enhancement strategies to the design of integrated broadband amplifier, we achieve an integrated circuit of the 300 GHz carrier frequency receiver for wireless wideband operation up to/over 10 GHz. This is, to the best of our knowledge, the first demonstration of low cost 130 nm Si-CMOS technology, plasma wave transistors based fast/wideband integrated receiver operating at 300 GHz atmospheric window. These results pave the way towards future large scale (cost effective) silicon technology based terahertz wireless communication receivers.