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- Nuclear spin relaxation in n-GaAs: From insulating to metallic regime doi link

Auteur(s): Vladimirova M.(Corresp.), Cronenberger S., Scalbert D., Kotur M., Dzhioev R. I., Ryzhov I. I., Kozlov G. G., Zapasskii V. S., Lemaitre A., Kavokin K. V.

(Article) Publié: Physical Review B, vol. 95 p.125312 (2017)
Texte intégral en Openaccess : arxiv


Ref HAL: hal-01523113_v1
DOI: 10.1103/PhysRevB.95.125312
WoS: WOS:000399218900003
Exporter : BibTex | endNote
8 Citations
Résumé:

Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities.We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples where electrons are localized, nuclear spin relaxation is strongly enhanced at low magnetic fields. The origin of this effect could reside in the quadrupole interaction between nuclei and fluctuating electron charges, that has been proposed to govern nuclear spin dynamics at low magnetic fields in the insulating samples. The characteristic values of these magnetic fields are given by dipole-dipole interaction between nuclei in bulk samples, and are greatly enhanced in microcavities, presumably due to additional strain, inherent to microstructures and nanostructures.