Auteur(s): Rumyantsev V. V., Kozlov D. v., Morozov S. V., Fadeev M. a., Kadykov A., Teppe F., Varavin V. s., Yakushev M. v., Mikhailov N. N., Dvoretskii S. A., Gavrilenko V. I.

(Article) Publié: Semiconductor Science And Technology, vol. 32 p.095007 (2017)