Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers Auteur(s): Zielinski Marcin, Chassagne Thierry, Arvinte Roxana, Michon Adrien, Portail Marc, Contreras S., Juillaguet S., Peyre H.
Conference: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, GR, 2016-09) Ref HAL: hal-01935556_v1 Exporter : BibTex | endNote Résumé: Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers |