High Temperature Electrical Transport Study of MBE grown Mg-doped AlGaN Auteur(s): Contreras S., Konczewicz L., Juillaguet S., Peyre H., Al khalfioui Mohamed, Matta S., Leroux Mathieu, Damilano Benjamin, Brault Julien (Affiches/Poster) 12th international conference on nitride semiconductors (STRASBOURG, FR), 2017-07-24 Résumé: High Temperature Electrical Transport Study of MBE grown Mg-doped AlGaN |