Room-temperature Terahertz Emission from Nanometer Field Effect Transistors Auteur(s): Dyakonova N., Dyakonov M., El Fatimy A., Lusakowski J., Knap W., Bollaert S., Shchepetov A., Roelens Y., Gaquiere Ch., Theron D., Cappy A., Poisson M.-A., Morvan E. (Article) Publié: Applied Physics Letters, vol. 88 p.141906 (2006) Ref HAL: hal-00264792_v1 DOI: 10.1063/1.2191421 WoS: 000236612000021 Exporter : BibTex | endNote 127 Citations Résumé: Room-temperature generation of terahertz radiation in nanometer gate length InAlAs/InGaAs and AlGaN/GaN high-mobility transistors is reported. A well-defined source-drain voltage threshold for the emission exists, which depends on the gate bias. Spectral analysis of the emitted radiation is presented. The highest emission power emitted from a single device reached 0.1 µW. |