Sommaire:

Among the nitride alloy semiconductor structures used in various devices, AlInGaN epilayer can give more freedom in adjusting lattice constants and band gaps independently. The AlInGaN epilayer with an appropriate composition ratio can be grown as lattice matched to InGaN and can be used as electron blocking layer or window layer in solar cells. Therefore, the quaternary AlInGaN is a promising candidate towards enhancing electrical/optical confinement and minimizing mismatch-induced strain at the same time.
In the present lecture, MOCVD growth and characterization of InGaN/GaN quantum wells and AlInGaN/GaN will be presented. High resolution X-ray diffraction, photoluminescence, time resolved photoluminescence, Raman spectroscopy and atomic force microscopy have been employed to study the structural and optical properties of the heterostructures. The results are correlated with growth parameters and crystalline quality of the materials.

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