Sommaire:

After launching the information age with the development of microelectronics and optoelectronics, semiconductors are expected to play a major role in another technological revolution, linked to the control of individual quantum objects. Among all the quantum systems based on these materials, deep point defects emerge as very promising due to their high versatility and their potential large scale on-chip integration. While being trapped in a crystal, they share strong similarities with vacuum isolated atoms, like optical excitation and fluorescence emission. Furthermore, some of them also possess a long-lived ground-state electron spin that can be controlled by a combination of optical and microwave magnetic fields. This additional quantum degree of freedom can be used on a broad range of applications, spanning from ultrasensitive nanoscale sensing to quantum information processing.

In this talk, I will give an overview of the potential of spin defects in semiconductors for quantum technologies. First I will explain what makes these systems so versatile and attractive by focusing on the current most prominent defect: the NV center in diamond. Then I will pick a few examples of the work I carried out on this system to illustrate its current abilities. At last, I will detail the research project I want to develop at L2C, linked to another semiconductor that could share the advantages of diamond without its drawbacks and that is still very little explored in the context of quantum technologies, namely silicon carbide (SiC).

Pour plus d'informations, merci de contacter Rousseau E.