Sommaire:

An analogy is traced between behavior of relativistic electrons in vacuum and electrons in narrow-gap semiconductors described by a two-band k.p model. Energy dispersion in the forbidden gap, statistical properties of electron gas, interband tunneling in electric field and energy dependence of the spin magnetic moment are used to illustrate the analogy. It is emphasized that it is much easier to observe semirelativistic effects in semiconductors than relativistic effects in vacuum.

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