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(313) Production(s) de KNAP W.
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Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor
Auteur(s): Teppe F., Veksler D, Kachorovski Vy, Dmitriev Ap, Xie X, Zhang Xc, Rumyantsev S, Knap W., Shur Ms
(Article) Publié:
Applied Physics Letters, vol. 87 p.022102 (2005)
Ref HAL: hal-00540640_v1
DOI: 10.1063/1.1952578
WoS: 000230435800020
Exporter : BibTex | endNote
74 Citations
Résumé: We report on the room-temperature, resonant detection of femtosecond pulsed terahertz radiation obtained by optical rectification in a ZnTe crystal. The detection was realized using a 250 nm gate length GaAs/AlGaAs heterostructure field-effect transistor. We show that physical mechanism of the detection is related to the plasma waves excited in the transistor channel. The detection is strongly enhanced by increasing the drain current and driving the transistor into the plasma wave instability region. Our results clearly show that plasma wave nanometer transistors can be efficient and fast detectors for terahertz spectroscopic imaging based on the femtosecond pulsed THz sources. (c) 2005 American Institute of Physics.
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Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor
Auteur(s): Teppe F., Knap W., Veksler D, Shur Ms, Dmitriev Ap, Kachorovskii Vy, Rumyantsev S
(Article) Publié:
Applied Physics Letters, vol. 87 p.052107 (2005)
Ref HAL: hal-00540639_v1
DOI: 10.1063/1.2005394
WoS: 000230886100037
Exporter : BibTex | endNote
140 Citations
Résumé: We report on room-temperature, resonant detection of 0.6 THz radiation by 250 nm gate length GaAs/AlGaAs heterostructure field-effect transistor. We show that the detection is strongly increased (and becomes resonant) when the drain current increases and the transistor is driven into the current saturation region. We interpret the results as due to resonant plasma wave detection that is enhanced by increasing the electron drift velocity. (c) 2005 American Institute of Physics.
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Terahertz investigation of high quality indium nitride epitaxial layers
Auteur(s): Meziani Ym, Maleyre Benedicte, Sadowski Ml, Ruffenach S., Briot O., Knap W.
(Article) Publié:
Physica Status Solidi A, vol. 202 p.590-592 (2005)
Texte intégral en Openaccess :
Ref HAL: hal-00540412_v1
DOI: 10.1002/pssa.200460434
WoS: 000228522300021
Exporter : BibTex | endNote
8 Citations
Résumé: We report on the optical characterization of InN layers in the THz range and magnetic fields up to 13 T. The results are interpreted using the dielectric function formalism, with contributions of cyclotron resonance, phonons, plasmons and helicon wave excitations. We show how THz radiation transmission measurements can provide an optical contactless method of determining the quality (carrier density and momentum scattering rate) in the InN layers. (c) 2005 WILEY-VCH Verlag GmbH W Co.
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Semiconductor nanometric transistors for terahertz oscillations
Auteur(s): Lusakowski J., Knap W.
Conférence invité: The 7-th International Conference-School on Advanced Materials and Thechnologies (Palanga, LT, 2005)
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Terahertz emission by plasma waves in high electron mobility transistors
Auteur(s): Knap W., Lusakowski J., Teppe F., Diakonova N.
Conférence invité: 7th Topical Workshop on Heterostructure Microelectronics (TWHM 2007) (Hyogo, JP, 2005)
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Terahertz Nanotransistors
Auteur(s): Knap W.
Conférence invité: 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 14) (Chicago, US, 2005)
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Nanometer Transistors for Emission and Detection of THz Radiation
Auteur(s): Lusakowski J., Knap W., Diakonova N.
Conférence invité: the International Union of Materials Research Societies' 9th International Conference on Advanced Materials (IUMRS-ICAM) (Singapore, SG, 2005)
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