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(80) Production(s) de AULOMBARD R.
Growth and characterisation of Eu doped GaN thin films Auteur(s): Halambalakis G., Rousseau N., Briot O., Ruffenach S., Aulombard R., Edwards Pr, O'Donnell Kp, Wojtowicz T., Ruterana P.
Conference: Meeting of the European-Materials-Research-Society (Strasbourg (FRANCE), FR, 2004-05-24) |
Giant second-harmonic generation due to quasi-phase matching in a one-dimensional GaN photonic crystal Auteur(s): Torres Jeremi, Coquillat D., Legros Rene, Lascaray Jean-Paul, Ruffenach S., Briot O., Aulombard R., Peyrade D., Chen Y., Le Vassor D'Yerville Marine, Centeno Emmanuel, Cassagne D., Albert Jean-Paul (Article) Publié: Physica Status Solidi B, vol. 240 p.455-458 (2003) Texte intégral en Openaccess : |
Er Doped GaN by gas source molecular beam epitaxy on GaN templates. Auteur(s): Rousseau N., Briot O., Ribes V., Aulombard R.
Conference: Symposium on New Applications for Wide-Bandgap Semiconductors (SAN FRANCISCO (CA), US, 2003-04-22) |
High reflectivity AlGaN/GaN Bragg mirrors grown by MOCVD for microcavities applications. Auteur(s): Moret M., Ruffenach S., Briot O., Gil B., Aulombard R.
Conference: Symposium on New Applications for Wide-Bandgap Semiconductors (SAN FRANCISCO (CA), US, 2003-04-22) |
Modeling of nitride semiconductor based double heterostructure tunnel diodes Auteur(s): Moret M., Ruffenach S., Briot O., Aulombard R.
Conference: Symposium on New Applications for Wide-Bandgap Semiconductors (SAN FRANCISCO (CA), US, 2003-04-22) |
Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution Auteur(s): Ribayrol A., Coquillat D., De La Rue Rm, Murad Sk, Wilkinson Cdw, Girard P., Briot O., Aulombard R. (Article) Publié: Materials Science And Engineering: B, vol. 59 p.335-339 (1999) |
Influence of defect states on the nonlinear optical properties of GaN Auteur(s): Haag H., Honerlage B., Briot O., Aulombard R. (Article) Publié: Physical Review B, vol. 60 p.11624-11630 (1999) |