Accueil > Production scientifique
(140) Production(s) de JOUAULT B.
Quantum Hall resistance standard in graphene devices under relaxed experimental conditions Auteur(s): Ribeiro-Palau R., Lafont F., Brun-Picard J., Kazazis D., Michon A., Cheynis F., Couturaud O., Consejo C., Jouault B., Poirier W., Schopfer F. (Article) Publié: Nature Nanotechnology, vol. 10 p.965 - 971 (2015) |
Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide Auteur(s): Lafont F., Ribeiro-Palau R., Kazazis D., Michon A., Couturaud O., Consejo C., Chassagne T., Zielinski M., Portail M., Jouault B., Schopfer F., Poirier W. (Article) Publié: Nature Communications, vol. 6 p.6806 (2015) Texte intégral en Openaccess : |
Indirect excitons in wide band gap semiconductors. Auteur(s): Fedichkin F., Jouault B., Guillet T., Brimont C., Valvin P., Bretagnon T., Lahourcade Lise, Grandjean Nicolas, Lefebvre P., Vladimirova M.
Conférence invité: International School on Nanophotonics and Photovoltaics. INSP 2015. (Cefalu, IT, 2015-09-15) |
Studying the number of graphene layers on copper substrate Auteur(s): Landois P., Bayle M., Decams J.M., Dieraert Axel, Huntzinger J.-R., Wang T., Peyre H., Jouault B., Zahab A. A., Paillet M., Contreras S. (Affiches/Poster) GDR-GNT (Aussois, FR), 2015-11-29 |
Transport of Indirect Excitons in Polar GaN/AlGaN Quantum Well Structures Grown on Sapphire and GaN Substrates. Auteur(s): Fedichkin F., Jouault B., Vladimirova M., Guillet T., Brimont C., Valvin P., Bretagnon T., Grandjean Nicolas, Lefebvre P.
Conference: Collective Electronic Excitations in 2D (CEE 2D 2015) - INDEX Conference (Pise, IT, 2015-09-20) |
Transport of dipolar excitons in (Al,Ga)N/GaN quantum wells. Auteur(s): Fedichkin F., Andreakou P., Jouault B., Vladimirova M., Guillet T., Brimont C., Valvin P., Bretagnon T., Dussaigne Amélie, Grandjean Nicolas, Lefebvre P. (Article) Publié: -Physical Review B Condensed Matter And Materials Physics (1998-2015), vol. 91 p.205424 (2015) Texte intégral en Openaccess : |
Quantum Hall effect of self-organized graphene monolayers on the C-face of 6H-SiC Auteur(s): Jabakhanji B., Consejo C., Camara N., Desrat W., Godignon P., Jouault B. (Article) Publié: Journal Of Physics D: Applied Physics, vol. 47 p.094009 (2014) |