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(54) Production(s) de TIBERJ A.
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Micro-Raman investigation of few graphene layers grown on 6H-SiC 
Auteur(s): Camassel J., Huntzinger J.-R., Tiberj A., Syväjärvi M., Yakimova Rositza, Giannazzo F.
Conference: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09) (catane, IT, 2009)
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Very large monolayer graphene ribbons grown on SiC
Auteur(s): Camara N., Rius G., Huntzinger J.-R., Tiberj A., Mestres N., Pérez Murano F., Godignon Philippe, Camassel J.
Conference: International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09) (Catane, IT, 2009)
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Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
Auteur(s): Eid J., Galben I.-G., Zoulis G., Robert Teddy, Chaussende D., Juillaguet S., Tiberj A., Camassel J.
Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), ES, 2008-09-07)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2008, vol. 615-617 p.45-48 (2009)
Ref HAL: hal-00390466_v1
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Résumé: We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the Structural defects. like stacking faults and dislocations. The effect of changing the nitrogen flow rate oil the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.
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AFM and Raman Studies of Graphene Exfoliated on SiC
Auteur(s): Tiberj A., Martin Fernandez M., Camara N., Poncharal Philippe, Michel T., Sauvajol J.-L., Godignon P., Camassel J.
Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), ES, 2008-09-07)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2008, vol. 615-617 p.215-218 (2009)
Ref HAL: hal-00411935_v1
Exporter : BibTex | endNote
Résumé: We report an investigation of few layers graphene exfoliated on SiC. Using AFM and Raman spectroscopy, we find that the graphene thickness determined from the normalized intensity of Raman lines significantly depart from the one obtained using XPS.
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Selective epitaxial growth of graphene on SiC
Auteur(s): Camara N., Rius G., Huntzinger J.-R., Tiberj A., Mestres N., Godignon P., Camassel J.
(Article) Publié:
Applied Physics Letters, vol. 93 p.123503 (2008)
Texte intégral en Openaccess : 
Ref HAL: hal-00543852_v1
DOI: 10.1063/1.2988645
WoS: 000259799100096
Exporter : BibTex | endNote
44 Citations
Résumé: We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at similar to 1582 cm(-1) in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth. (C) 2008 American Institute of Physics.
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Early stage formation of graphene on the C face of 6H-SiC
Auteur(s): Camara N., Rius G., Huntzinger J.-R., Tiberj A., Magaud Laurence, Mestres N., Godignon P., Camassel J.
(Article) Publié:
Applied Physics Letters, vol. 93 p.263102 (2008)
Texte intégral en Openaccess :
Ref HAL: hal-00543850_v1
DOI: 10.1063/1.3056655
WoS: 000262225700054
Exporter : BibTex | endNote
34 Citations
Résumé: An investigation of the early stage formation of graphene on the C face of 6H-silicon carbide (SiC) is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular graphene layers, which have a pyramidal, volcanolike shape with a center chimney where the original defect was located. At higher temperatures, complete conversion occurs but, again, it is not homogeneous. Within the sample surface, the intensity of the Raman bands evidences inhomogeneous thickness.
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Low electron mobility of field-effect transistor determined by modulated magnetoresistance
Auteur(s): Tauk R., Lusakowski J., Knap W., Tiberj A., Bougrioua Z., Azize M., Lorenzini P., Sakowicz M., Karpierz K., Fenouillet-Beranger C., Casse M., Gallon C., Boeuf F., Skotnicki T.
(Article) Publié:
Journal Of Applied Physics, vol. 102 p.103701.1 (2007)
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