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Field effect transistors for terahertz imaging 
Auteur(s): Knap W., Valusis Gintaras, Łusakowski Jerzy, Coquillat D., Teppe F., Diakonova N., Nadar S., Karpierz Krzysztof, Bialek Marcin, Seliuta Dalius, Kasalynas Irmantas, Fatimy Abdel El
(Article) Publié:
Physica Status Solidi (C), vol. 6 p.2828-2833 (2009)
Texte intégral en Openaccess : 
Ref HAL: hal-00545637_v1
DOI: 10.1002/pssc.200982562
WoS: 000279548000055
Exporter : BibTex | endNote
11 Citations
Résumé: Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the terahertz (THz) range for micrometer and sub-micrometer channel lengths. Non linearity of the gated electron gas in the transistor channel can be used for the detection of THz radiation. The possibility of tuneable narrow band detection in sub-THz and THz range, related to plasma resonances, has been demonstrated for nanometre gate length transistors at cryogenic temperatures. At room temperatures the plasma oscillations are usually strongly damped, but field effect transistors can still operate as an efficient broadband detectors in the THz range. We present an overview of experimental results on THz detection by field effect transistors made of III-V and Si materials, The material issue is discussed and first room applications of FETs for imaging at frequencies above 1 THz are demonstrated.
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Field Effect Transistors for Terahertz Detection
Auteur(s): Knap W., Nadar S., Videlier H., Boubanga tombet Stephane, Coquillat D., Diakonova N., Teppe F., El Fatimy A., Et al .
Conférence invité: The Int. Workshop on Terahertz Technology 2009 (, JP, 2009-11-30)
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Terahertz wide range tunable cyclotron resonance p-Ge laser
Auteur(s): Klimenko O., Mityagi Yuri, Savinov S, Murzin V, Diakonova N., Solignac P., Knap W.
Conference: 16th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostruc (Montpellier, FR, 2009-08-24)
Actes de conférence: Journal of Physics Conference Series Volume: 193, vol. p.Article Number: 012064 (2009)
Résumé: We present a Terahertz (THz) p-Ge laser operating in a cyclotron resonance (CR) mode. Thanks to the use of the optimum crystallographic orientation of p-Ge with respect to crossed E(perpendicular to)B fields, the laser line frequency is continuously tunable in the range 1.2-2.8 THz (40-90 cm(-1)) with the linewidth being 6 GHz (0.2 cm(-1)). We also show that due to such a wide CR radiation range, the laser can serve as a base for a THz spectrometer.
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Terahertz imaging with GaAs field-effect transistors
Auteur(s): Lisauskas A., Von spiegel W., Boubanga tombet Stephane, El Fatimy A., Coquillat D., Teppe F., Diakonova N., Knap W., Roskos H. g.
(Article) Publié:
Electronics Letters, vol. 44 p.408-409 (2008)
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Plasma wave oscillations in nanometer field effect transistors for terahertz detection and emission
Auteur(s): Knap W., Teppe F., Diakonova N., Coquillat D., Lusakowski J.
(Article) Publié:
Journal Of Physics: Condensed Matter, vol. 20 p.384205 (2008)
Ref HAL: hal-00540631_v1
PMID 21693813
DOI: 10.1088/0953-8984/20/38/384205
WoS: 000258736800009
Exporter : BibTex | endNote
64 Citations
Résumé: The channel of a field effect transistor can act as a resonator for plasma waves propagating in a two-dimensional electron gas. The plasma frequency increases with reduction of the channel length and can reach the terahertz (THz) range for nanometer size transistors. Recent experimental results show these transistors can be potential candidates for a new class of THz detectors and emitters. This work gives an overview of our recent relevant experimental results. We also outline unresolved problems and questions concerning THz detection and emission by nanometer transistors.
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THz emission from AlGaN/GaN high mobility transistors
Auteur(s): Diakonova N., Coquillat D., Teppe F., Knap W., Levinshtein M.E., Rumyantsev S.L., Poisson M.A., Delage S., Gaquiere C., Vandenbrouk S., Cappy A.
Conference: V International Conference “Basic Problems of Optics (St Petersburg, RU, 2008)
Actes de conférence: Proceedings of V International Conference “Basic Problems of Optics, vol. p.21 (2008)
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Room temperature terahertz detection from a new doubly interdigitated grating gate transistor
Auteur(s): Coquillat D., Nishimura T., Meziani Y., Nadar S., Teppe F., Diakonova N., Boubanga-Tombet S., Otsuji T.
Conference: Topical Meeting 2 : Terahertz - Science and Technology (Paris, Villepinte, FR, 2008)
Actes de conférence: Proceedings of the 2008 EOS Annual Meeting, Topical Meeting 2 : Terahertz - Science and Technology - EOS Annual Meeting, vol. p.31 (2008)
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