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(146) Production(s) de DIAKONOVA N.
Double-Heterojunction Bipolar Transistor as THz Detector for Communications Auteur(s): Diouf Isidore, Nouvel Philippe, Varani Luca, Pénarier Annick, Diakonova N., Coquillat D., Nodjiadjim V., Riet M., Zerounian Nicolas, Aniel F., Blin S.
Conference: 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) (Chengdu, CN, 2021-08-29) |
Investigating the low-frequency vibrations of chlorophyll derivatives using terahertz spectroscopy Auteur(s): Coquillat D., O'Connor Emma, Brouillet Etienne, Meriguet Y., Bray C., Nelson David J., Faulds Karen, Torres Jeremie, Diakonova N.
Conference: SPIE Optical Engineering + Applications, 2021, San Diego, California, United States (San Diego, US, 2021-08-02) |
Low frequency noise in reverse biased double heterostructure P- InAsSbP /n- InAs infrared photodiodes Auteur(s): Diakonova N., Karandashev S, Levinshtein M, Matveev B, Remennyi M (Article) Publié: Semiconductor Science And Technology, vol. 35 p.075010 (2020) |
Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias Auteur(s): Diakonova N., Karandashev S.A., Levinshtein M.E., Matveev B.A., Remennyi M.A. (Article) Publié: Infrared Physics Technology, vol. 111 p.103460 (2020) Texte intégral en Openaccess : |
Gated two-dimensional electron gas in magnetic field: Nonlinear versus linear regime Auteur(s): Diakonova N., Dyakonov M., Kvon Z. (Article) Publié: Physical Review B, vol. 102 p. (2020) Texte intégral en Openaccess : |
Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field Auteur(s): Grigelionis I., Diakonova N., Knap W., Teppe F., Prystawko P., Kasalynas I. (Article) Publié: Solid State Communications, vol. 320 p.114019 (2020) |
Room temperature low frequency noise in n + -InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes Auteur(s): Diakonova N., Karandashev S, Levinshtein M, Matveev B, Remennyi M (Article) Publié: Semiconductor Science And Technology, vol. 34 p.105015 (2019) |