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Semi-conducteurs: Graphène, Grand gap & Photovoltaïque
(29) Production(s) de l'année 2016
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Comparative study of p-type 4H-SiC grown on n-type and semi insulating 4H-SiC substrates 
Auteur(s): Contreras S., Konczewicz L., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Juillaguet S.
Conference: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, GR, 2016-09) |
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Influence of Growth Temperature on Site Competition Effects During Chemical Vapor Deposition of 4H-SiC Layers Auteur(s): Zielinski Marcin, Chassagne Thierry, Arvinte Roxana, Michon Adrien, Portail Marc, Contreras S., Juillaguet S., Peyre H.
Conference: 11th European Conference on Silicon Carbide and Related Materials (Thessaloniki, GR, 2016-09) |
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Convenient Graphene-Based Quantum Hall Resistance Standards Auteur(s): Brun-Picard J., Ribeiro-Palau R., Lafont F., Kazazis D., Michon A., Cheynis F., Couturaud O., Consejo C., Jouault B., Poirier W., Schopfer F.
Conference: 2016 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2016) (345 E 47TH ST, NEW YORK, NY 10017 USA, ZZ, 2016) |
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Modelling of 4H-SiC VJFETs with Self-Aligned Contacts Auteur(s): Zekentes Konstantinos, Vassilevski Konstantin, Stavrinidis Antonis, Konstantinidis Konstantin, Kayambaki Maria, Vamvoukakis Konstantinos, Vassakis Emmanouil, Peyre H., Makris Nikolaos, Bucher Matthias, Schmid Patrick, Stefanakis Dionyssios, Tassis Dimitrios
Conference: 16th International Conference on Silicon Carbide and Related Materials 2015 (Catane, IT, 2015-10-15) |
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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions Auteur(s): Sadovyi B., Amilusik M., Staszczak G., Bockowski M., Grzegory I., Porowski S., Konczewicz L., Tsybulskyi V., Panasyuk M., Rudyk V., Karbovnyk I., Kapustianyk V., Litwin-Staszewska E., Piotrzkowski R.
(Article) Publié:
Acta Physica Polonica A, vol. 129 p.A126-A128 (2016)
Texte intégral en Openaccess : |
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Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC Auteur(s): Contreras S., Konczewicz L., Kwasnicki P., Arvinte Roxana, Peyre H., Chassagne Thierry, Zielinski Marcin, Kayambaki Maria, Juillaguet S., Zekentes Konstantinos
Conference: 16th International Conference on Silicon Carbide and Related Materials (Catane, IT, 2015-10-05) |
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p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum Auteur(s): Zielinski Marc, Arvinte Roxana, Chassagne Thierry, Michon Adrien, Portail Marc, Kwasnicki P., Konczewicz L., Contreras S., Juillaguet S., Peyre H.
Conference: ICSCRM (Giardini Naxos, FR, 2015-10-02) |
