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Intervalley scattering in hexagonal boron nitride 
Auteur(s): Cassabois G., Valvin P., Gil B.
(Article) Publié:
Physical Review B, vol. 93 p.035207 (2016)
DOI: 10.1103/PhysRevB.93.035207
WoS: 000369221000004
43 Citations
Résumé: We report photoluminescence experiments bringing the evidence for intervalley scattering in bulk hexagonal boron nitride. From a quantitative analysis of the defect-related emission band, we demonstrate that transverse optical phonons at the K point of the Brillouin zone assist inter-K valley scattering, which becomes observable because stacking faults in bulk hexagonal boron nitride provide a density of final electronic states. Time-resolved experiments highlight the different recombination dynamics of the phonon replicas implying either virtual excitonic states or real electronic states in the structural defects.
Commentaires: Editors' suggestion:
The authors have conducted an experimental study of hexagonal boron nitride using steady-state and time-resolved photoluminescence. The assignment of previously observed lines of unknown origin is made convincingly to indirect excitons assisted by acoustic and optical phonons and to defect-assisted transitions. This is further evidence for h-BN being an indirect band-gap semiconductor.
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