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(408) Production(s) de l'année 2015
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Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures
Auteur(s): Ngo T. H., Rosales D., Gil B., Valvin P., Damilano Benjamin, Lekhal Kaddour, de Mierry Philippe
Conference: GALLIUM NITRIDE MATERIALS AND DEVICES X (san francisco, US, 2015)
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Excitation-dependent carrier dynamics in Al-rich AlGaN layers and multiple quantum wells
Auteur(s): Šcajev Patrik, Miasojedovas Saulius, Jarasiunas Kestutis, Hiramatsu Kazumaza, Miyake Hideto, Gil B.
(Article) Publié:
Physica Status Solidi A, vol. 252 p.1043-1049 (2015)
Texte intégral en Openaccess :
Ref HAL: hal-01238741_v1
DOI: 10.1002/pssb.201451479
WoS: WOS:000354267300032
Exporter : BibTex | endNote
5 Citations
Résumé: .The combined temporally, spatially and spectrally‐resolved optical techniques, namely the photoluminescence, light induced transient grating, and differential reflectivity were used for investigation of excitation‐dependent PL efficiency, exciton lifetime, and diffusion coefficient in Si‐doped Al‐rich multiple quantum wells and epilayers at various temperatures. Novel features of carrier recombination and in‐plane diffusion were observed. Low‐excitation radiative lifetime of 1–2 ns was found temperature‐independent in 80–150 K interval, while it sublinearly decreased with excitation at excess carrier densities above 1018 cm−3. The lifetime decrease correlated with the increase of diffusion coefficient, indicating excitation‐enhanced delocalization of localized excitons and therefore enhanced capture to nonradiative centers. The droop of photoluminescence efficiency with excitation was the strongest at 80–150 K due to strong delocalisation at low‐temperatures, while at higher temperatures the thermal activation prevailed in photoluminescence excitation dependence. The photoluminescence efficiency quenching at T > 200 K provided rather high activation energies of ∼100 and 160 meV for Al‐rich multiple quantum wells and epilayers, correspondingly.
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Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy
Auteur(s): Rosales D., Gil B., Bretagnon T., Brault Julien, Vennegues Philippe, Nemoz Maud, de Mierry Philippe, Damilano Benjamin, Massies Jean, Bigenwald Pierre
(Article) Publié:
Journal Of Applied Physics, vol. 118 p.024303 (2015)
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Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
Auteur(s): Lekhal K., Damilano B., Ngo H. T., Rosales D., de Mierry P., Hussain S., Vennegues P., Gil B.
(Article) Publié:
Applied Physics Letters, vol. 106 p.142101 (2015)
Texte intégral en Openaccess :
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Determination of carrier diffusion length in GaN
Auteur(s): Hafiz Shopan, Zhang Fan, Monavarian Morteza, Avrutin Vitaliy, Morkoc Hadis, Oezguer Uemit, Metzner Sebastian, Bertram Frank, Christen Juergen, Gil B.
(Article) Publié:
Journal Of Applied Physics, vol. 117 p.013106 (2015)
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Changes in the starch-protein interface depending on common wheat grain hardness revealed using atomic force microscopy
Auteur(s): Chichti Emna, George M., Delenne Jean-Yves, Lullien-Pellerin Valerie
(Article) Publié:
Plant Science, vol. 239 p.1-8 (2015)
Texte intégral en Openaccess :
Ref HAL: hal-01238105_v1
DOI: 10.1016/j.plantsci.2015.07.006
WoS: WOS:000362306700001
Exporter : BibTex | endNote
15 Citations
Résumé: The Atomic Force Microscope tip was used to progressively abrade the surface of non-cutted starch granules embedded in the endosperm protein matrix in grain sections from wheat near-isogenic lines differing in the puroindoline b gene and thus hardness. In the hard near-isogenic wheat lines, starch granules exhibited two distinct profiles corresponding either to abrasion in the surrounding protein layer or the starch granule. An additional profile, only identified in soft lines, revealed a marked stop in the abrasion at the protein-starch transition similar to a lipid interface playing a lubricant role. It was related to the presence of both wild-type puroindolines, already suggested to act at the starch-protein interface through their association with polar lipids.This study revealed, for the first time, in situ differences in the nano-mechanical properties at the starch-protein interface in the endosperm of wheat grains depending on the puroindoline allelic status.
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Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors
Auteur(s): Kadykov A., Teppe F., Consejo C., Viti L., Vitiello M. S., Krishtopenko S., Ruffenach S., Morozov S. V., Marcinkiewicz M., Desrat W., Diakonova N., Knap W., Gavrilenko V. I., Mikhailov N. N., Dvoretsky S. A.
(Article) Publié:
Applied Physics Letters, vol. 107 p.152101 (2015)
Texte intégral en Openaccess :
Ref HAL: hal-01237406_v1
DOI: 10.1063/1.4932943
WoS: WOS:000363424000019
Exporter : BibTex | endNote
11 Citations
Résumé: We report on terahertz photoconductivity under magnetic field up to 16 T of field effect transistor based on HgTe quantum well (QW) with an inverted band structure. We observe pronounced cyclotron resonance and Shubnikov-de Haas-like oscillations, indicating a high mobility electron gas in the transistor channel. We discover that nonlinearity of the transistor channel allows for observation of characteristic features in photoconductivity at critical magnetic field corresponding to the phase transition between topological quantum spin Hall and trivial quantum Hall states in HgTe QW. Our results pave the way towards terahertz topological field effect transistors.
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