The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional narrowing, with a width increasing linearly with the lattice temperature T . In contrast, when the exciton-lattice coupling is strong, the line shape is Gaussian with a width increasing sublinearly with the lattice temperature, proportional to sqrt(T) . While the former case is commonly reported in the literature, here the latter is reported for hexagonal boron nitride. Thus the theoretical predictions of Toyozawa [Prog. Theor. Phys. 20, 53 (1958)] are supported by demonstrating that the exciton-phonon interaction is in the strong-coupling regime in this van der Waals crystal.

Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities.We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples where electrons are localized, nuclear spin relaxation is strongly enhanced at low magnetic fields. The origin of this effect could reside in the quadrupole interaction between nuclei and fluctuating electron charges, that has been proposed to govern nuclear spin dynamics at low magnetic fields in the insulating samples. The characteristic values of these magnetic fields are given by dipole-dipole interaction between nuclei in bulk samples, and are greatly enhanced in microcavities, presumably due to additional strain, inherent to microstructures and nanostructures.

A general theory of photon-mediated energy and momentum transfer in N-body planar systems out of thermal equilibrium is introduced. It is based on the combination of the scattering theory and the fluctuational electrodynamics approach in many-body systems. By making a Landauer-like formulation of the heat transfer problem, explicit formulas for the energy transmission coefficients between two distinct slabs as well as the self-coupling coefficients are derived and expressed in terms of the reflection and transmission coefficients of the single bodies. We also show how to calculate local equilibrium temperatures in such systems. An analogous formulation is introduced to quantify momentum transfer coefficients describing Casimir-Lifshitz forces out of thermal equilibrium. Forces at thermal equilibrium are readily obtained as a particular case. As an illustration of this general theoretical framework, we show on three-body systems how the presence of a fourth slab can impact equilibrium temperatures in heat-transfer problems and equilibrium positions resulting from the forces acting on the system.

We study the coupling between surface plasmons of a doped graphene sheet and those of a metal-like/dielectric/ metal-like plasmonic waveguide. In order to allow such a coupling, the metal-like media are chosen to be doped semiconductors with plasma energies close to the Fermi level of the doped graphene. We derive and compute numerically the full dispersion relation and study in detail the characteristics of the hybrid modes emerging from strong coupling.

We describe a recently developed formulation of coupled conductive and radiative heat transfer (RHT) between objects separated by nanometric, vacuum gaps. Our results rely on analytical formulas of RHT between planar slabs (based on the scattering-matrix method) as well as a general formulation of RHT between arbitrarily shaped bodies (based on the fluctuating–volume current method), which fully captures the existence of temperature inhomogeneities. In particular, the impact of RHT on conduction, and vice versa, is obtained via self-consistent solutions of the Fourier heat equation and Maxwell’s equations. We show that in materials with low thermal conductivities (e.g. zinc oxides and glasses), the interplay of conduction and RHT can strongly modify heat exchange, exemplified forinstance by the presence of large temperature gradients and saturating flux rates at short (nanometric) distances. More generally, we show that the ability to tailor the temperature distribution of an object can modify the behaviour of RHT with respect to gap separations, e.g. qualitatively changing the asymptotic scaling at short separations from quadratic to linear or logarithmic. Our results could be relevant to the interpretation of both past and future experimental measurementsof RHT at nanometric distances.

We show that graphene-dielectric multilayers give rise to an unusual tunability of the Casimir-Lifshitz forces and allow to easily realize completely different regimes within the same structure. Concerning thermal effects, graphene-dielectric multilayers take advantage of the anomalous features predicted forisolated suspended graphene sheets, even though they are considerably affected by the presence of the dielectric substrate. They can also achieve the anomalous nonmonotonic thermal metallic behavior by increasing the graphene sheets density and their Fermi level. In addition to a strong thermal modulation occurring at short separations, in a region where the force is orders of magnitude larger than the one occurring at large distances, the force can be also adjusted by varying the number of graphene layers as well as their Fermi levels, allowing for relevant force amplifications which can be tuned, very rapidly and in situ, by simply applying an electric potential. Our predictions can be relevant for both Casimir experiments and micro- or nanoelectromechanical systems and in new devices for technological applications.

We investigate the opto-electronic properties of hexagonal boron nitride grown by high temperature plasma-assisted molecular beam epitaxy. We combine atomic force microscopy, spectroscopic ellipsometry, and photoluminescence spectroscopy in the deep ultraviolet to compare the quality of hexagonal boron nitride grown either on sapphire or highly oriented pyrolytic graphite. For both substrates, the emission spectra peak at 235 nm, indicating the high optical quality of hexagonal boron nitride grown by molecular beam epitaxy. The epilayers on highly oriented pyrolytic graphite demonstrate superior performance in the deep ultraviolet (down to 210 nm) compared to those on sapphire. These results reveal the potential of molecular beam epitaxy for the growth of hexagonal boron nitride on graphene, and more generally, for fabricating van der Waals heterostructures and devices by means of a scalable technology.