An electromagnetic wave detector comprises a field effect transistor, an antenna 601 connected to a first end of a gate 608 of the field effect transistor for receiving incident electromagnetic waves, and a biasing connection pad 605 connected to a second end of the gate 608 for applying a bias voltage to the transistor. The antenna may have a first part 601b connected to the first end of the gate 608 and a second part 601a connected to a source 602 of the transistor. The detector may further comprise a virtual ground element 607 connected to the second end of the gate 608. A control module may control the bias voltage applied on the biasing connection pad 605 according to the electromagnetic power received by the detector. The transistor may be a high electron mobility transistor (HEMT).

At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at least one electromagnetic wave of a given frequency may comprise at least one first field effect transistor, and at least one antenna configured to receive the at least one electromagnetic wave and connected to a gate of the at least one first field effect transistor, wherein a length of the gate is in a same order of magnitude as an oscillation length of an oscillation regime of the at least one first field effect transistor at the given frequency, and a width of the gate is such that an impedance presented by the at least one first field effect transistor in the oscillation regime is adapted to an impedance of the at least one antenna.

We report on the photoresponse of 0.7-μm InP double heterojunction bipolar transistor to THz radiation of low and high intensities, when the collector is unbiased. At low intensities, the photoresponse is linear in radiation intensity. Under intense laser radiation, we observe a saturation at intensities > 15 kW/cm2, sample damaging arising around ∼ 40 kW/cm2. The photoresponse as a function of base-emitter bias dependence does not change with the radiation intensity.

We have evaluated the performance of the InP double heterojunction bipolar transistor and InP-based varactors as a room temperature sensitive detectors for THz computed tomography applications. They were used in transmission mode for the 350 GHz and 650 GHz atmospheric windows.

Bulk films and heterostructures based on HgCdTe compounds can be engineered to fabricate “gapped-at-will” structures. Therefore, 1D, 2D and even 3D massless particles can be observed in topological phase transitions driven by intrinsic (quantum well thickness, Cd content) and external (magnetic field, temperature, strain or hydrostatic pressure) physical parameters. In this work, we report on our experimental results, obtained by temperature-dependent Terahertz and Mid-Infrared magneto-spectroscopy, of topological phase transitions in HgCdTe-based Quantum Wells and bulk films. These transitions are accompanied with the appearance of 2D and 3D massless particles called Dirac and Kane fermions, respectively.

In this paper, an overview of main results concerning THz detection by nanometer field effect transistors (FETs) and heterojunction based transistors (HBTs) is presented. Different GaInAs/InP and GaN/AlGaN nanometer field effect transistors based detectors are presented. We present also first Silicon C-MOS transistors based integrated circuits for wireless communication in sub-THz range. Special attention is given to transistors based focal plane arrays. We show, how these arrays, together with in purpose developed diffractive 3D printed optics lead to construction of the demonstrators of safety and industrial quality control scanners.