Auteur(s): Gryglas M., Baj M., Jouault B., Faini G., Cavanna A.
Conference: International Conference on Superlattices Nano-Structures and Nano-Devices (ICSNN-02) (TOULOUSE (FRANCE), FR, 2002-07-22)
Actes de conférence: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, vol. 17 p.303-304 (2003)
Ref HAL: hal-00544455_v1
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Résumé:
Our paper is a first step towards tunnelling spectroscopy of individual X-minimum-related shallow donors. We investigated I-V characteristics of submicrometer mesa structures made on GaAs/AlAs/GaAs wafers delta-doped with silicon in the middle of AlAs layer. At 4.2 K and magnetic field up to 6 T we resolved well-separated peaks attributed to resonant tunnelling via individual donors. (C) 2002 Elsevier Science B.V. All rights reserved.