GaAs : Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions Auteur(s): Sadowski Janusz, Dluzewski Piotr, Kret Slawomir, Janik Elzbieta, Lusakowska Elzbieta, Kanski Janusz, Presz Adam, Terki F., Charar S., Tang Dong (Article) Publié: Micro & Nano Letters, vol. 7 p.2724-2728 (2007) Texte intégral en Openaccess : Ref HAL: hal-00549882_v1 PMID 17718585 DOI: 10.1021/nl071190f WoS: 000249501900033 Exporter : BibTex | endNote 48 Citations Résumé: GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. After deposition corresponding to a 200 nm thick (Ga,Mn)As layer the nanowires are around 700 nm long. Their shapes are tapered, with typical diameters around 30 nm at the base and 7 nm at the tip. The wires grow along the 111) direction, i.e., along the surface normal on GaAs(111)B and inclined on GaAs(001). In the latter case they tend to form branches. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self-assembled structures for nanospintronics. |