--------------------
- Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT hal link

Auteur(s): Eid J., Galben I.-G., Zoulis G., Robert Teddy, Chaussende D., Juillaguet S., Tiberj A., Camassel J.

Conference: 7th European Conference on Silicon Carbide and Related Materials (Barcelona (SPAIN), ES, 2008-09-07)
Actes de conférence: SILICON CARBIDE AND RELATED MATERIALS 2008, vol. 615-617 p.45-48 (2009)


Ref HAL: hal-00390466_v1
Exporter : BibTex | endNote
Résumé:

We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the Structural defects. like stacking faults and dislocations. The effect of changing the nitrogen flow rate oil the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.