Room temperature imaging at 1.63 and 2.54 THz with field effect transistor detectors Auteur(s): Nadar S., Videlier H., Coquillat D., Teppe F., Sakowicz M., Diakonova N., Knap W., Seliuta D., Kasalynas Irmantas, Valusis Gintaras (Article) Publié: Journal Of Applied Physics, vol. 108 p.054508 (2010) Ref HAL: hal-00545617_v1 Exporter : BibTex | endNote Résumé: GaAs nanometric field effect-transistors are used for room temperature single-pixel imaging using radiation frequencies above 1 THz. Images obtained in transmission mode at 1.63 THz are recorded using transistors operating in a photovoltaic mode with spatial resolution of 300 mu m and voltage sensitivity of about 8 mV/W. A reduction in response with increasing frequency was observed and mitigated by the application of a source-drain current, leading to the demonstration of imaging at up to 2.54 THz. |