|Room Temperature Imaging above one Terahertz by Field Effect Transistor as Detector |
Auteur(s): NADAR S., COQUILLAT D., Sakowicz M., VIDELIER H., KLIMENKO O., TEPPE F., DIAKONOVA N., KNAP W., Seliuta D., Kasalynas I., Valusis G.
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome (ITALY), FR, 2010-09-05)
Actes de conférence: 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), vol. p.6024 (2010)
Résumé: GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 mu m. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.