Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors Auteur(s): Diakonova N., El Fatimy A., Meziani Y., Otsuji T., Coquillat D., Knap W., Teppe F., Vandenbrouk S., Madjour K., Theron D., Gaquiere C., Poisson M. A., Delage S.
Conference: 35th International Conference on Infrared, Millimeter and Terahertz Waves (Rome, IT, 2010-09-05) Ref HAL: hal-00636136_v1 Exporter : BibTex | endNote Résumé: We present experimental results on the Terahertz radiation from high electron mobility transistors at room temperature, which clearly show the tunability of the emission frequency by the gate voltage. |