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- Field Effect Transistors For Fast Terahertz Detection and Imaging

Auteur(s): Knap W., Nadar S., Videlier H., Boubanga-tombet S., Coquillat D., Diakonova N., Teppe F., Karpierz K., Lusakowski J., Sakowicz M., Seliuta D., Kasalynas I., Valusis G., Monfray S., Skotnicki T.

Conference: 18TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS (MIKON-2010), VOL 1 AND VOL 2 (, LT, 2010-06-14)
Actes de conférence: 18TH INTERNATIONAL CONFERENCE ON MICROWAVES, RADAR AND WIRELESS COMMUNICATIONS (MIKON-2010),, vol. VOL 1,2 p.000296519300002 (2010)


Résumé:

We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.