Silicon versus III-V semiconductor material choice for terahertz imaging with nanometerfield effect transistors based detectors Auteur(s): Knap W., Coquillat D., Diakonova N., Teppe F.
Conférence invité: 5th Int. Conference on Materials Science and Condensed Matter Physics MSCMP 2010 (, MD, 2010-09-13) Ref HAL: hal-00811771_v1 Exporter : BibTex | endNote Résumé: Silicon versus III-V semiconductor material choice for terahertz imaging with nanometerfield effect transistors based detectors |