|Field effect transistors for terahertz detection and emission |
Auteur(s): Knap W., Nadar S., Videlier H., Boubanga-Tombet S., Coquillat D., Diakonova N., Teppe F., Karpierz K., Lusakowski J., Sakowicz M., Kasalynas I., Seliuta D., Valusis G., Otsuji T., Meziani Y., Fatimy A. El, Vandenbrouk S., Madjour K., Theron D., Gaquiere C.
(Article) Publié: Journal Of Infrared, Millimeter And Terahertz Waves, vol. 32 p.618-628 (2010)
Ref HAL: hal-00597123_v1
Exporter : BibTex | endNote
Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the Terahertz (THz) range. Nonlinear properties of the plasma/electron gas in the transistor channel can be used for the rectification and detection of THz radiation. The excitation of plasma waves by sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature plasma oscillations are usually overdamped, but the FETs can still operate as efficient broadband rectifiers/detectors in the THz range. We present a few recent experimental results on THz detection by FETs showing some new ways of improvement of FETs for THz imaging at room temperature as well as the new physical phenomena like detection in quantizing magnetic fields. We also demonstrate THz emission properties of GaN based FETs.