Ref HAL: hal-00666145_v1
PMID 21711670
DOI: 10.1186/1556-276X-6-141
WoS: 000290525700050
Exporter : BibTex | endNote
4 Citations
Résumé:

Using high-temperature annealing conditions with a graphite cap covering the C-face of, both, on axis and 8 degrees off axis 4H-SiC samples, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. On the best samples, we find a moderate p-type doping, a high-carrier mobility and resolve the half-integer quantum Hall effect typical of high-quality graphene samples. A rough estimation of the density of states is given from temperature measurements.