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DOI: 10.12693/APhysPolA.119.606
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Résumé:

Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon delta-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

Commentaires: 39th Conference on the Physics of Semiconductors, Jaszowied Int Sch, Krynica-Zdroj, POLAND, JUN 19-24, 2010