Résumé:

The Raman bands intensities, frequencies, widths and profiles of few layer graphene (FLG) are extremely sensitive to doping, strain, stacking order, number of graphene sheets, crystalline quality and laser wavelength. For samples of epitaxial graphene grown on silicon carbide, the laser wavelength is basically the only factor known a priori. Furthermore, the concomitance of second order SiC Raman modes in the graphene G and D bands region complicates the extraction of the graphene signal. Developing a robust characterization tool enabling to disentangle all these effects and to provide reliable information is thus highly needed and challenging. We propose an approach where micro-Raman spectroscopy is combined with reflectivity and transmission measurements to discriminate between the different contributions in the measured Raman signatures and to access to the detailed characteristics of the samples. Here, we demonstrate the efficiency of this method in order to determine the number of graphene layers. We address then the question of using the 2D band width or ratio of the 2D and G bands intensities as a criteria to distinguish between mono and multi layer(s) graphene.