Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001) Auteur(s): Michon A., Roudon E., Portail M., Jouault B., Contreras S., Chenot S., Cordier Y., Lefebvre D., Vézian S., Zielinski M., Chassagne T., Camassel J.
Conference: SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 (KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, CH, 2012) Ref HAL: hal-03037521_v1 DOI: 10.4028/www.scientific.net/MSF.717-720.625 Exporter : BibTex | endNote Résumé: We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6 root 3x6 root 3)-30 degrees interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed. Commentaires: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland, OH, SEP 11-16, 2011 |